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2 table of contents introduction ....................................... ................................................... ............................4 siliconsensoroptions ............................. ................................................... ...................5 design msa series ................................................... ................................................... .........7 design msd series ................................................... ................................................... ........8 design msd series ................................................... ................................................... ........9 design msp series ................................................... ................................................... ....... 10 design mspsd duo series ................................................... ............................................. 11 design mspsd tetra series ................................................... ........................................... 12 design mspx series ................................................... ................................................... ..... 13 design msx series ................................................... ................................................... ....... 14 design msx series ................................................... ................................................... ....... 15 singlealphabetdesign............................. ................................................... ................ 16 design f ................................................... ................................................... ........................ 16 design g ................................................... ................................................... ...................... 17 design i ................................................... ................................................... ........................ 18 design j ................................................... ................................................... ....................... 19 design p ................................................... ................................................... ....................... 20 design q ................................................... ................................................... ...................... 21 design s ................................................... ................................................... ....................... 22 design t ................................................... ................................................... ....................... 23 design v ................................................... ................................................... ....................... 24 design w1 ................................................... ................................................... .................... 25 design w2 ................................................... ................................................... .................... 26 design x ................................................... ................................................... ....................... 27 doublealphabetdesign............................. ................................................... .............. 28 design aa ................................................... ................................................... ..................... 28 design bb ................................................... ................................................... ..................... 29 design cc ................................................... ................................................... .................... 31 design ee ................................................... ................................................... ...................... 32 design ff ................................................... ................................................... ...................... 33 design ii ................................................... ................................................... ....................... 34 design ll ................................................... ................................................... ...................... 35 design nn ................................................... ................................................... ..................... 36 design pp ................................................... ................................................... .................... 37 design tt ................................................... ................................................... ...................... 38 design uu ................................................... ................................................... ..................... 39 design vv ................................................... ................................................... ..................... 40 design yy ................................................... ................................................... ...................... 41 design yy1 ................................................... ................................................... .................... 42
3 triplealphabetdesign ............................. ................................................... ................ 43 design aaa ................................................... ................................................... .................... 43 design bbb ................................................... ................................................... ................... 44 design ddd5 ................................................... ................................................... ................ 45 design eee ................................................... ................................................... .................... 46 design fff ................................................... ................................................... ..................... 47 design ggg ................................................... ................................................... ................. 48 design hhh ................................................... ................................................... ................... 49 design lll ................................................... ................................................... ..................... 50 design mmm ................................................... ................................................... .................. 51 design ooo ................................................... ................................................... ................ 52 design qqq1 ................................................... ................................................... .............. 53 design qqq2 ................................................... ................................................... .............. 54 design rrr ................................................... ................................................... ................. 55 design sss ................................................... ................................................... ................... 56 design ttt ................................................... ................................................... .................... 57 design ttt ................................................... ................................................... .................... 58 design xxx2 ................................................... ................................................... ................. 59 design xxx3 ................................................... ................................................... ................. 60 design zzz ................................................... ................................................... .................... 61 miscellaneous series ................................................... ................................................... ........ 62 miscellaneous series ................................................... ................................................... ........ 63 singlealphabetindex.............................. ................................................... ................. 64 doublealphabetindex.............................. ................................................... ............... 65 doublealphabetindex.............................. ................................................... ............... 66 triplealphabetindex .............................. ................................................... ................. 67 triplealphabetindex .............................. ................................................... ................. 68
4 introduction micron semiconductor physics 2007 micron semiconductor ltd has developed the most extensive custom range of ac and dc detectorsintheworldoverthepast20years.in 2006 more than 20 new detectors, including pixels,microstrips,duoandtetralateraldevices were designed, several of which are now availableinthe2007catalogue. many of our most popular designs used in radioactive beam, nuclear and space physics have been developed further with a variety of implant windows, metal coverage and packaging options for minimizing dead layers andcloserspacingbetweendetectorassemblies. 2006 saw micron semiconductors most extensive contribution to space physics, delivering over 100 fully space qualified assemblies to worldwide institutes and space agencies. the nasas stereo mission, to observe 3d images of the sun, is ready to launch microns thinnest space qualified devices,thesinglesidedmsa003/01615 m. the development of thin silicon devices continues withprojectstodeliverysinglesided ultra thin silicon less than 10 um and double sided large area super thin microstrip detectors lessthan40umthick. micron continues to provide a full inhouse processing capability for 4 and 6inch silicon wafertechnology.thestandardthicknessrange for4inchwafersis40C1500 mandon6inch wafersitis150C1000 m,otherthicknessesare available as nonstandard. there are also projects studying different silicon materials includingntd,mczandptypeforfuturehigh energyphysicsexperiments. laser cutting is in full production for computerized dicing irregular detector shapes, boring small diameter holes and achieving minimumdamagetosilicondevicesedges.
5 silicon sensor options window type therangeofdeadlayerwindowsavailablewiththe inhousevarian300xpionimplanterarelisted below.windowtypesrefertothejunctionofadevi ce,butcanalsobeachievedontheohmicside uponrequest. minimum energy threshold window type dead layer electron proton 2 0.5 m 4kev 70kev 7 0.1 m 1kev 10kev 9 0.05 m 300ev 4kev metal coverage thestandardmetallisationschemeis100%sputtere daluminiumofthickness0.5 mforgoodultra sonicwirebondingconnections.thecoverageofthe metalovertheactiveareacanbesuitedtothe sensorsapplicationandtocomplimentthedeadlaye roftheimplant. metal coverage description m a continuous metal coverage of standard thickness o ver the whole active arearegions. g grid coverage, typically 3 %, of standard thickness metallisation over the wholeactiveareaandcontactpadsforwirebonding . p aperipherymetalband,typically30 mwide,aroundtheedgeoftheactive areas and contact pads for wire bonding. the majori ty of the active area metalcoveragefree. t a standard periphery coverage, as described above, for good electrical contact,andathinmetalcoveragetypically0.10 .3 moverthemajorityof theactivearea. d adoublemetalprocessusedtotrackreadoutsignal inadirectiondifferent totheactiveareaelements. the metal coverage refers to the junction side, but can also be achieved on the ohmic side upon request.theevaporatedmetalsystemti/ni/auisal soavailableonrequest.goldohmiccontactsare usedforhighoperatingtemperaturedetectors+55 o to+120 o requiredformilitaryapplications.
6 wafer size the wafer size corresponds to the standard * silicon thicknesses that the device can be processedon. . wafer size standard silicon thicknesses available 3inch 20,30,40 m 4inch 40,50,65,80,100,140,250,300,500,1000,1500 m 6inch 150,200,300,400,500,675 m * othernonstandardandr&dsiliconthicknessesare availableonrequest. singlesidedlargeareamsx25(50x50mm 2 )anddesignw1(ss)stripdetectorsareproduced to20 musingaproprietaryprocess. guard ring design latestdesignsincorporateamultiguarddesignedt osupportahigherbiasvoltagebeyondfull depletion and avoid premature breakdown. they are t herefore better suited for sensors fabricated on the thicker silicon range beyond 500 m which require high depletion voltage operation. packages thesiliconchipscanbedeliveredaschiponlyor assembledinastandardorcustompackage. the majority of packages are made from standard fr4 material or on black fr4 material where light transmission through the package needs to be minimized. many of the designs currentlyofferedonfr4materialcanbemodifieda ndtransferredontoceramic96%alumina or aluminium nitride) for operation in ultra high v acuum environments. other package materialssuchaspolyamideandkaptonforhighden sityreadoutsarealsoavailableonrequest. assemblieshavebeendesignedwherethedetectoris mountedonaheatconductingsubstrate with the readout asic amplifiers connected directly to the support, see msa127 detector assembly. theconnectortype(straightor90degree)andorie ntation(exitingthejunctionorohmicside) can also bechanged tosuit the experimental arrang ement. where a common pitch isusedit mayalsobepossibletorequestaspecificconnecto rpart.thechoiceofconnectoriscriticalas it often occupies valuable space in an experiment. it is also important to ensure that the insertion force of a mating connector does not stre ss or damage the detector assembly.
7 design msa series design msa series design msa series design msa series custom silicon annular detectors silicondetectortype: singlesideddcannulardetectors design: totallydepletedionimplantedstructures . msa 002/020-1000 m msa 003/016-15 m front & rear view msa127 assembly supplied to tr saxs project at argo nne national lab . design activeareadiameter (mm) chip dimensions window type metal coverage wafer size (inch) guard ring design package msa002/020 element 1 activeareadiameter=8.0mm element 2 activeareadiameter=20.0mm n o annuli=2 annularseparation=40 m 24.0mm flattoflat n o sides=16 2,7,9 m 4 mgr chip only msa003/016 element 1 activeareadiameter=7.0mm element 2/3 activeareadiameter=16.0mm n o annuli=2 annularseparation=50 m 18.15mm flattoflat n o sides=8 2,7,9 m 4 mgr chip only msa127 activeareadiameter=67.236mm n o annuli=127 annularpitch=variable annularseparation=50 m holediameter=9.8mm 136.472mm flattoflat n o sides=24 2 m 6 mgr ceramic flipchip mounted * availableasopticalornucleardevices environmentaltesting spacequalified,military,i ndustrial,research,physicsprojects options: experiement: caltech:stereo,argonnenationallab: trsaxs qualityassurance:iso9001
8 design msd series design msd series design msd series design msd series custom silicon circular pad detectors silicondetectortype: singlearea design: totallydepletedionimplantedstructures. single sided, single element circular msd series: design active area diameter (mm) chip dimensions (mm 2 ) window type metal coverage wafer size (inch) guard ring design package msd003 3.00 5.0x5.0 2 m 4 mgr chiponly msd004 * 4.00 7.0x7.0 2,7,9 m,t,p 4 sgr blackfr4pcb msd005 5.00 7.0x7.0 2,7,9 m,t,p 4 mgr blackfr4pcb msd062 6.20 8.2x8.2 2,7,9 m,t,p 4 mgr chiponly msd007 * 7.00 10.0x10.0 2,7,9 m,t,p 3&4 sgr& mgr rangeofblack fr4pcbs msd008 * 8.00 10.0x10.0 2,7,9 m,t,p 4 mgr blackfr4pcb msd009 9.00 11.0x11.0 2 m 4 mgr chiponly msd010 10.00 13.0x13.0 2,7,9 m,t,p 4 mgr chiponly msd011 10.00 12.0x12.0 2 m 6 mgr ceramic msd018 * 18.00 21.0flattoflat (8sides) 2,7,9 m,t,p 4 mgr blackfr4pcb msd020 20.00 22.0x22.0 2 m 4 mgr chiponly msd024 24.50 28.76flattoflat (16sides) 2 m 6 mgr housedina metalcase msd030 30.00 32.00x32.00 2 m 4 mgr chiponly msd035 35.0 39.0flattoflat 2,7,9 g 4 mgr rangeofblack fr4pcbs msd040 40.00 44.0flattoflat (16sides) 2 m 4 mgr chiponly msd085 85.00 90.0flattoflat (16sides) 2,7,9 m,t,p 4 mgr blackfr4pcb radiationhardness: survivalto10 14 neutrons,10 15 protons capacitance: subjecttodepletiondepthe.g.40pf /cmfor300 m leakagecurrent: 1na/cmto8na/cmsubjecttoact iveareaanddepletiondepth. window: thin0.1 m standard0.5 m operatingtemperature range: 65 o cto+125 o c environmentaltesting options: spacequalified,military,industrial,r esearch,physicsprojects . qualityassurance:iso9001
9 design msd series design msd series design msd series design msd series msd018, msd007 and msd004 assemblies supplied to ja xa are mounted on pcbs with common mounting positio ns. many detector have a range of packages e.g. mds035 used by the compass and crater projects. msd024 detector supplied as an alpha monitor. msd085, the largest of the cir cular single areas. qualityassurance:iso9001
10 design msp series design msp series design msp series design msp series custom silicon photodiodes silicondetectortype: largesingleareastructure technology: 3inch&4inchsilicon design: ionimplantedsiliconphotodiodesfeaturing ultra low leakagecurrents,low noise, thinwindowandfastresponse.availableinassorte dpackagestomeetavarietyof light detection applications requiring rugged relia ble structures for scientific, industrial, militaryand spaceapplications.these devicescanalso beusedaslow costnuclearparticledetectors. experimentswith gslsaladinandindianauniversi tyssiliconball. csiinterface: customerchoice: selectedorstandard acivearea: type msp165 msp2200 msp3e300 msp4e300 msp5300 msp7e140 msp8C300 msp05300 active area 2.0x2.0mm 2 5.5x2.75mm 2 10.0x10.0mm 2 20.0x20.0mm 2 5.0x5.0mm 2 7.0x3.0mm 2 20.0x3.0mm 2 24mmdiameter standardwindow: 0.5 m uv/bluewindow: 0.1 m specialrequest thickness: 65 m 140 m 200 m 300 m fulldepletion(fd): 5v 20v 30v 50v typically capacitance(typ): 160pf/cm 2 75pf/cm 2 50pf/cm 2 35pf/cm 2 sensitivity: 300C1150nm responsivity: 0.6a/w (900nm) responsivity: 0.3a/w (550nm) leakagecurrent: selected0.5na/cm,typically1.5 na/cmmaximum. (@20 o c,fd) standard1.5na/cm,typically3na/cmmaxim um. nep(900nm): 10a/hztypically risetime: 2ns,typically10nsmaximum (850mm,20 ,fd) falltime: 5ns,typically10nsmaximum (850mm,20 ,fd) packaging: edesignationepoxymolded packagewindow: transparentepoxy,clearglass,fi lteredglass,sapphireorquartz csiresolution: to5%withselectedelectronics& fieldeffecttransistors. operating standard20 o cto+55 o c temperature: selected46 o cto+85 o c radiation hardnesscoeff: 3x10acm(neutronsandprotons) stability& reliability: alldevicesreleasedareonbiasat2 0vfor500hoursat20 o c. qualityassurance:iso9001
11 design mspsd duo series design mspsd duo series design mspsd duo series design mspsd duo series custom silicon duo-lateral position sensitive detec tors silicondetectortype: doublesided singleareapositionsensitivedetector design: a double sided ponn silicon structure wit h highly uniform resistive junction andohmiclayersandequipotentialchannels.there adoutbetweentwoanodesis orthogonalwithrespecttothereadoutbetweenthe twocathodes. the mspsd dl 04-300 assembly for the faust upgrade experiment. mspsd dl 050 ceramic assembly double sided mspsd duo series: design active area dimension (mm 2 ) chip dimensions (mm 2 ) guard ring design wafer size (inch) package mspsd dl 010 1.0x1.0 3.0x3.0 sgr 4 chiponly mspsd dl 011 1.0x1.0 15.356x15.356 sgr 4 ceramic mspsd dl 030 3.0x3.0 5.0x5.0 sgr 4 chiponly mspsd dl 031 3.0x3.0 15.356x15.356 sgr 4 ceramic mspsd dl 050 5.0x5.0 7.0x7.0 sgr 4 chiponly mspsd dl 051 5.0x5.0 15.356x15.356 sgr 4 ceramic mspsd dl 03 10.0x10.0 12.0x12.0 sgr 4 chiponly mspsd dl 0311 10.0x10.0 15.356x15.356 sgr 4 ceramic mspsd dl 04 20.0x20.0 21.0x23.0 sgr 4 standardfr4 mspsd dl 63 63.0x63.0 66.0x66.0 mgr 4 chiponly environmentaltesting options: spacequalified,military,industrial,r esearch,physicsprojects. qualityassurance:iso9001
12 design mspsd tetra series design mspsd tetra series design mspsd tetra series design mspsd tetra series custom silicon tetra-lateral position sensitive det ector silicon detector type: singlesidedsingleareapositionsensitivedetecto r design: a single sided ponn silicon structure wit h highly uniform resistive junction and equipotential channels. the readout is between four corner anodes and a single cathode. the designs feature an infinity pla ne for eliminating any pin cushionaffectstoachieve<1mmpositionresoluti onwithheavyions. themspsdtl63200 assembly withadoublerecess package to protect wire bonds in a close stack configuration . recent test beam at the texas a & m facility using 63 cu, 16 o and 4 he have shown the mspsd dl63200 achieve 100%linearityandapositionresolution<1mm. bestresultsareachievedusinga6 sshapingtime. therisetimewas150400nsandfallingtime30us. single sided mspsd tetra series: design active area dimension (mm 2 ) chip dimensions (mm 2 ) guard ring design wafersize (inch) package mspsd tl 50 5.0x5.0 15.356x15.356 sgr 4 chiponly mspsd tl 07 7.0x7.0 10.0x10.0 mgr 4 chiponly mspsd tl 63 63.0x63.0 66.0x66.0 mgr 4 blackfr4 environmentaltesting options: spacequalified,military,industrial,r esearch,physicsprojects. qualityassurance:iso9001
13 design mspx se design mspx se design mspx se design mspx series ries ries ries custom silicon pixel detectors silicondetectortype: singlesideddcpixeldetectors design: totally depleted ion implanted structures w ith double metal system for some designstotracksignalstothechipedges. mspx080 with double metal tracking mounted mspx 12x12 with double metal tracking mounted on a non-transmission ceramic. on a doub le stack transmission pcb. the ultra thin silicon mspx 042-15 um detector asse mbly. the mspx 1 x 16 & mspx 1 x1 stack assembly. single sided mspx series: design activepixel area dimension ( m 2 ) pixel array chip dimensions (mm 2 ) window type metal coverage wafer size (inch) guard ring design package mspx 1x6 01 1x6 2 m 4 sgr polyimide mspx 1x6 02 1700x2100 1700x1800 1700x1700 1x6 8.00x15.00 2 m 4&6 mgr blackfr4 mspx 1x1 * 1000x1000 1x1 4.00x20.50 2 m 4&6 mgr stackable standardfr4 pcb mspx 1x16 * 1000x1000 1x16 4.00x20.50 2 m 4&6 mgr stackable standardfr4 pcb mspx 4 x 4 4950x4950 4x4 24.0x24.0 2 d 6 mgr pcb mspx 12x12 4950x4950 12x12 64.0x64.0 2 d 6 mgr ceramic mspx 042 10000x10000 4x4 60.0x60.0 2 m 4 mgr blackfr4 pcb mspx080 12075.0x12075.0 8x8 99.0x99.0 2 d 6 mgr ceramic * mspx1x1andmspx1x16stackablepackageconfigurat ion qualityassurance:iso9001
14 design msx series design msx series design msx series design msx series custom silicon pad detectors silicondetectortype: singlearea design: totallydepletedionimplantedstructures. micron semiconductors ultra low leakage currents a nd thin entrance window couples with fast response from total depletion wit h over voltage capability permits a wide range of applications for these sing le area detectors. for example, high energy physics, fission fragments det ection, room temperature xray detection, gamma transient detect ion, heavy ion physics andnuclearstructurephysics. single sided msx series: extensiverangeofsingleareadetectors. design activearea dimension (mm 2 ) chip dimensions (mm 2 ) window type metal coverage wafer size (inch) guard ring design package msx02 5.25x2.75 6.05x3.3 2 m sgr t05 MSX03 10.0x10.0 17.0x17.0 ~13x13 ~21.0x21.0 2,7,9 m,t,p 4&6 mgr rangeofpcbs andceramics msx04 20.0x20.0 22.95x22.95 2 m 4 sgr standardfr4 msx060 40.0x15.0 43.0x18.0 2,7,9 m,t,p 4 mgr chip only msx07 7.0x3.0 7.74x3.74 2 m 3 sgr chiponly msx077 7.5x7.5 10.50x10.50 2 m 4 mgr chiponly msx09 30.0x30.0 ~33.0x33.0 2 m 4 sgr& mgr standardfr4 msx25 50.0x50.0 50.4x50.4 2 m 3 sgr rangeofpcbs andceramics. msx35 50.0x70.0 52x72 2 m,g 4 mgr rangeofpcbs msx40 63.975x63.975 67.975x67.975 2 m 4 mgr rangeof pcbs msx100 100.0x100.0 102.0x102.0 2 m 6 mgr standardfr4 designationexample: msx003300 radiationhardness: survivalto10 14 neutrons,10 15 protons capacitance: subjecttodepletiondepthe.g.40pf /cmfor300 m leakagecurrent: 1na/cmto8na/cmsubjecttoact iveareaanddepletiondepth. window: thin0.1 m standard0.5 m operatingtemperature range: 65 o cto+125 o c environmentaltesting options: spacequalified,military,industrial,r esearch,physicsprojects. qualityassurance:iso9001
15 design msx series design msx series design msx series design msx series (a) (b) (c) the MSX03 can be mounted in a range of packages fro m double recessed black fr4 (a), kapton stack with a minimum chip stack separation of 120 um (b) to cera mic transmission package for operation in ultrahighvacuumenvironments(c). msx 060 mounted on a double recessed fr4 transmissi on package. the msx35-500 2m and msx35-500 2g mounted on differ ent packages. the msx100 the largest active area in the msx series.
16 single alphabet design design f design f design f design f specialist detectors for nuclear physics silicondetectortype: totally depelted silicon mic rostrip detector with over voltageoperation. technology: 4inchsilicon n o ofelements: 25 n o ofoutputs: 25 elementactivelength: 50mm totalactivewidth: 50mm elementseparation: 25 m elementpitch: 2mm thickness: 65 m,140 m,300 m,and500 m risetime: 20nsmaximum elementcapacitance: 185C25pfsubjecttothickne ss nominalinterstrip resistance: 100m alpharesolution junction55kevfwhmmaximum ohmic75kevfwhmmaximum maximumnoiseper element( st.c): 20kev metallisation: aluminum3000? contacts 5%metallisationontheactiveareaelemen t 100%metallisationonback standardpackage: pcb90x80mm 2 connectionsviasolderingwiresorspectrastrip8 01075 bondingwireprotectedwithepoxyresintoprevent userdamage. options: total overcoat with moisture protection re sin against dirty and high humidityenvironments. minimumacceptance 100%elementsoperationalwhen assembledbasedon95%of level: addressedmicrostripelementsmeetingthea bovespecifications. specification improvements: closerspecificationontheabovepar ametersavailableanrequest biasing: activearea negative substrate positive qualityassurance:iso9001
17 design g design g design g design g specialist detectors for nuclear physics silicondetectortype: quadrantdetector design totally depleted ion implanted structures wi th multiguard rings for over voltage operation. partdesignation: msq2565,msq25140,msq25300,m sq25500,andmsq251000 technology: 4inchsilicon n o ofelements: 4 n o ofoutputs: 5 elementactivearea: 2500mm 2 totalquadrantsector area: 24.975x24.975mm 2 quadrantsector separation: 50 m chipdimensions: 52.02x52.02mm 2 53.02x53.02 mm 2 57.02x57.02mm 2 thickness: 65 m,140 m,300 m,500 mand1000 m fulldepletion operationvoltage: 10C250vsubjecttothickness risetime: 50nsmaximum interquadrant: resistance: 1m resolution(am241): junction55kevtypical,75ke vmaximumfwhm ohmic75kevtypical,100kevmaximumfwhm quadrantsectornoise: 15kevfwhm(1 stc) element( st.c): 20kev metallisation: aluminum3000? contacts: metallisationontheactiveareaelement 100%metallisationonback minimumacceptance 100%elementsoperational pcbstandard: materialCfr4 thickness1.6,2.4or3.2mm dimensions70x70mm 2 mountings4holes 2 5mmatcorners aperture50x50mm 2 connectorscambion4601521020300 connections4toactivearea,2toground pcbcustom: 1. materialCfr4 thickness2.4mm dimensionsC59.0x59.0mm 2 aperture50x50mm 2 connectorsCcambion4602599040300 2. materialCfr4 thicknessC1.6,2.4or3.2mm dimensionsC55.4x55.4mm 2 connectorsCcambion4503703010300 msq25-1000 with pcb custom package 2 aperture50x50mm 2 experiment: cernisolde qualityassurance:iso9001
18 design i design i design i design i specialist detectors for nuclear physics silicondetectortype: microstripdetector design totallydepletedionimplantedstructureswi thovervoltageoperation. technology: 3and4inchsilicon n o ofelements: 7 n o ofoutputs: 9includingsubstrateandguardring. strippitch: 8.5mm totalactivearea: 60.0x40.0mm 2 stripseparation: 100 m fulldepletion(fd) operatingvoltage: fdtofd+30v leakagecurrent(fd): 50C150na/strip totalleakagecurrent: 1 amaximum interstripresistance: 10C100m totalalpharesolution: 55kevtypical radiationhardness: 1na/cm/100rads(protons) connections: ultrasonicwirebonding package: pcbedgewithverticalpins minimumacceptance: 100%elementsoperational experiment: cernua2,brookhavenrhicbrahms. qualityassurance:iso9001
19 design j design j design j design j specialist detectors for nuclear physics silicondetectortype: microstripdetector design: totallydepletedionimplantedstructurewi thovervoltageoperation. includesguardringsforhighvoltageoperatingpl ateau.thisdesignissimilarto design i with7channelsinsteadof28. partdesignation: designj140,designj500grandd esignj1000gr technology: 4inchsilicon n o ofelements: 28 n o ofoutputs: 30 totalactivearea: 60x40mm 2 pitch: 2.14mm sectorseparation: 100 m thickness: 65 m 140 m 300 m 500 m 1000 m fulldepletion operationvoltage: 30v 30v 30v 80v 200v leakagecurrent(fd): 10na/striptypically,100na /stripmaximum interstripresistance: 100m typical,10m minimum totalresolution 55kevtypical,159kevmaximumfw hmsubjecttothickness/capacitance (am241): quadrantsectornoise: 15kevfwhm(1 stc) radiationhardness: 1na/cm/100rads(grays)proton s detectorassembly package: oneedgepcb(g10)supportwiththreelead ingedgesiliconsides connections: 30verticalpins(matingsocketsforp cbinsetsavailableonrequest) guardringdesign: includesguardringforhigher voltageplateau acceptancelevel: 100%operationalonallchannel s userofthisdesign: indianauniversity qualityassurance:iso9001
20 design p design p design p design p specialist detectors for nuclear physics silicondetectortype: totallydepletedsingleside dmicrostrip design: silicon planar ion implanted passivated str ucturepon nsilicontotallydepleted single sided microstrip design exhibiting over volt age depletion capability with excellent radiation damage resistance and annealing capability for high neutron andheavyiondamagelevels. activearea: 20x20mm 2 activelength: 20mm elementpitch: 2mm activewidth: 20mm n o ofchannels: 10 n o ofreadouts: 100% thickness: 200 m,300 m,450 mand600 m operatingvoltage: 100+50v leakagecurrent: 10na risetime: 10ns/100 m elementcapaitance: 8C24pf contacting metallisation: aluminum3000C8000? package: pcbwithsinglesidedreadout dimensionsC35x34mm 2 qualityassurance:iso9001
21 design q design q design q design q specialist detectors for nuclear physics silicondetectortype: totallydepletedsingleside dmicrostrip design: silicon planar ion implanted passivated str ucturepon nsilicontotallydepleted single sided microstrip design exhibiting over volt age depletion capability with excellent radiation damage resistance and annealing capability for high neutron andheavyiondamagelevelssubjecttopackagingma terialusedinassembly. activearea: 10x10.4mm 2 activelength: 10mm elementpitch: 20 m oxideseparation: 10 m n o ofchannels: 520 n o ofreadouts: 100% thickness: 100 m,140 m,250 m,300 m,500 mand1000 m totaldarkcurrent: 1natypically,5namaximum radiationdamage 1na/cm/100rads contacting metallisation: aluminum3000&8000? chipsize: 14x14mm standard: suppliedaschiponlyforcustomerassemb ly custom: packageddevicesonrequesttocustomerdes ignfanouts. qualityassurance:iso9001
22 design s design s design s design s specialist detectors for nuclear physics silicondetectortype: singleanddoublesidedring counterdesign design: silicon planar ion implanted passivated str ucturepon nsilicontotallydepleted single sided multi ring with 90 o segments with optional double sided segments of 22.5 o exhibiting over voltage capability with excellent radiation damage resistanceandannealingcapabilityforhighneutro nandheavyiondamage. design s1 s2 technology 4 4 activearea 53cm 2 35cm 2 actveouterdiameter 96mm 70mm actveinnerdiameter 48mm 22mm annularholediameter 46mm 20mm n o offrontsegments 4 n o offrontcontactpads 64 48 n o ofbacksegments 16 16 n o ofbackcontactpads 16 16 s1 detector and pcb as viewed from the p- and n-side. s2 detector and pcb as view ed from the p- and n-side detectorthicknessrange: s1 65 m,140 m,300 mand500 m s2 65 m,140 m,300 m,500 mand1000 m package: pcb,ceramicorpcbkaptonsubjecttodesi gn readout: 100%onbothsides contactsmetallisation: aluminumfront1000?,back gold3000? qualityassurance:iso9001
23 design t design t design t design t specialist detectors for nuclear physics silicondetectortype: totallydepletedplanarstru cture design: silicon planar ion implanted structure p on n silicon totally depleted with resistive p junction layer featuring high uniformit y and equipotential channel alongthelinearaxisbetweenthetwoanodesofthi scommoncathodedevice. technology: 3inchsilicon positionsensitive: 1axis n o ofdetectors: 1or2 activearea: 50x10mm 2 capitance(fd): 4020pf/cmsubjecttodepletiond epth interanoderesistance: 4k minimumC10k maximum entrance/exitwindow: 0.2 m thickness: 35 m,65 m,140 m,300 m,500 mand1000 m alpharesolution: 0.5% positonresolution: 100 m300 msubjecttoreadoutelectronics. operatingvoltage: 10C250vsubjecttothickness chosen packages: singleordoubledetectorpcbavailablew ithmetalframe. detectorassemblyalsoavailableinauhvpackage design. connectors: conhex/3perdetectorunlesspcbonly design t single pcb assembly and metal frame assemb ly. note:seealso design tt series,positionsensitivedetectors(psd)18x10 mm 2 . qualityassurance:iso9001
24 design v design v design v design v specialist detectors for nuclear physics silicondetectortype: totallydepeltedsingleside dmicrostrip design: silicon planar ion implanted structure p on n silicon totally depleted with over voltagedepletioncapability.thedesignisbasedo nequallengthchannelsusing 4 inch silicon. operation voltage is depletion dept h and silicon resistivity dependent. technology: 4inchsilicon activearea: 77x57mm 2 elementlength: 57mm elementpitch: 300 m elementwidth: 250 m elementseparation: 50 m thickness: 65 m,140 m,300 mand500 m operatingvoltage: 10C100vsubjecttothickness selection elementcapacitance: 10pf elementdarkcurrent: 30natypically,100namaxim um noiseperelement: 10kev contacting metallisation: aluminum8000?bothsides minimumacceptance level: 98% package: pcb130x130mm 2 fanout: flexiblekaptonontwosided160x160mm connectors: conneiCpartn o 00274030105 experimentssupplied: fermilabe2687photontagging detector slac universityofsouthampton qualityassurance:iso9001
25 design w1 design w1 design w1 design w1 specialist detectors for nuclear physics silicondetectortype: totallydepletedsingleord oublesideddcmicrostrip. technology: 4inchsilicon n o junctionelements: 16 n o ohmicelements: 16 elementlength: 49.5mm elementpitch: 3.1mm elementwidth: 3000.0 m activearea: 50.0x50.0mm 2 chipdimensions: 52.25x52.25mm 2 53.78x53.78mm 2 thickness: 65,80,140,250,300,500,1000and1 500 m design w1(ds)-300 2m on a design w1(ds)-30 0 2m on a standard fr4 transmission package * . standard ceramic transmission pack age. design w1(ds)-300 2m on a design w1(ds) -300 2m on a custom fr4 transmission package. minimum material transmission package. window: junction: standardtype2orshallowtype7 or9implantsforthinwindow ohmic: standardtype2 metallisation: aluminum3000? junction: availablewith3%metalgridgorasst andardmcoverage. ohmic: standardmcoverage. package: rangeofpackageavailable,someshownabo ve. acceptance: 100% * compatablewiththemsx25detectorassemblyforad e/econfiguration. qualityassurance:iso9001
26 design w2 design w2 design w2 design w2 specialist detectors for nuclear physics silicondetectortype: singledccoupledmicrostrip detectorwithmultiguardrings forhighvoltageoperation. technology: 4inchsilicon partdesignation: w2(ss) acticearea: 25cm 2 50x50mm 2 n o ofstrips: 100 strippitch: 500 m stripwidth: 450 m striplength: 49950 m thickness: 40 m 70 m 100 m 1 40 m 500 m 1000 m thicknesstolerance: 10 m 10 m 10 m 10 m 30 m 100 m fulldepletion(fd): 10v 10v 15v 20v 70v 20 0v operatingvoltage: fdtofd+30v totalleakagecurrent typical: 300n 300n 300n 300n 400n 500na maximum: 1 1 1 2 3 totalcapacitance: 5000pf 4000pf 3000pf 2000p f 600pf 300pf stripcapacitance: 50pf 40pf 30pf 20pf 8pf 5pf junctionfwhm total resolution: typical 175kev 150kev 120kev 75kev 65kev 55kev am241(5.486me) maximum 200kev 175kev 150kev 100kev 75kev 75kev ohmicfwhm total resolution: typical 175kev 175kev 130kev 75kev 70kev 60kev am241(5.486mev) maximum 200kev 200kev 150kev 100kev 75kev 75kev metallisation: 3000? metallisationtolerance: 1000? acceptancelevel: 100%,allchannelsoperational. package: pcbtransmissionmountwith102outputs. experiment: infnnapoli qualityassurance:iso9001
27 design x design x design x design x specialist detectors for nuclear physics silicondetectortype: positionsensitivedetector (psd) design: silicon planar ion implanted structure p on n silicon totally depleted with resistive p junction layer featuring high uniformity and equipo tential channel along the linear axis betweenthetwoanodesofthiscommoncathodedevic eonallmicrostripchannels. x1 assembly x2 assembly x3 assembly design x1 x2 x3 techology 4 6 4 n o channels 16 4 4 positionsensitive 1axisoneachofthe16 channels 1axisoneachofthe4 channels 1axisoneachofthe4 channels positionresolution 200 m 5650 m 10000 m striparea 5.55x94.80mm 2 10.0x75.0mm 2 activearea 50x50mm 2 22.2x94.8mm 2 40.3x75.0mm 2 chipdimension 24.6x96.8mm 2 43.3x78.0mm 2 fulldepletion(fd) 10250v subjecttoselectedthickness 20v 10250v subjecttoselectedthickness leakagecurrent(fd) 50C250na subjecttoselectedthickness 30C50na 50C250na subjecttoselectedthickness totalcurrent(fd) 1C3 1 1C3 capacitance(fd) 40C20pf/cm subjecttoselectedthickness 600pf/strip 40C20pf/cm subjecttoselectedthickness interanode resistance 3C10k 4C10k 4C10k entrance/exitwindow 0.2 m thickness 60,140,300,500&1000 m 300 m 60,140,300,500&1000 m alpharesolution 55kevtypical 75kevtypical 75 kevtypical packages pcbwithconnectors 70.0x80.0x1.6mm 3 pcbwithconnections 98.0x27.76x1.6mm 3 pcbwithconnector connectors leadingedgeconnector junkoshaminiature coaxialcable 90 o unshroudedconnector minimumacceptancelevel 100% 100% 100% qualityassurance:iso9001
28 double alphabet design design aa design aa design aa design aa specialist detectors for nuclear physics silicondetectortype: positionsensitivedetector (psd) technology: 3inchsilicon design: ion implanted totally depleted sensitive re sistor division detector incorporating equipotentialstripsforhighlinearityandexcelle ntpositionresolution. activearea: 1.44cm 2 aa1 =12x12mm 2 aa2 =13x13mm 2 totalleakagecurrent: 5 atypically,50 amaximum operatingvoltage: fdtofd+30v fulldepletion(fd): 10C1000vsubjecttothickne ssselected interanoderesistance: 3k minimum,10k maximum positionresolution: 200 m alpharesolution: 0.3%typically,1%maximum thickness: 60 m,140 m,300 m,500 mand1000 m thicknesstolerance: 10 m thicknessuniformity: 5 m metallisation: 3000? metallisationtolerance: 1000? packages: pcbwithmetalhousing connectoroptions: sma,smb,conhexormicrodot stacking designcompatibleforstackingwithedete ctors. qualityassurance:iso9001
29 design bb design bb design bb design bb specialist detectors for nuclear physics silicondetectortype: doublesideddcmicrostripd etector technology: 3&4inchsilicon design: ion implanted totally depleted double sided dc nominal structure. detector thicknessrangeisfrom65 mto1500 msubjecttodesignselected. experiment lear cern nasa nasa argonne design bb1 bb2 bb4 bb5 active 16cm 2 5.67cm 2 33cm 2 10.24cm 2 active dimensions 40x40mm 2 24x24mm 2 65mm 2 32x32mm 2 n o channels 80 (40/side) 48 (24/side) 128 (64/side) 160(80/side) element pitch 1000 m 1000 m 1000 m 400 m readout 100% 100% 100% 100% space qualified no yes yes no experiment indiana nasuda tiara upgrade orruba design bb7 bb8 bb9 bb10 active 40.90cm 2 4.0cm 2 26.45cm 2 30.225 cm 2 active dimensions ~64x64mm 2 20x20mm 27.9x94.8 mm 2 75.0x40.3 mm 2 n o channels 64(32/side) 32 (16/side) 4 (single sided) 8 (single sided element pitch 2000 m 1250 m 7000 m 4944 m readout 100% 100% 100% 100% space qualified no yes no no partdesignation: addthicknessafterdesignidenti ficatione.g.bb71500 thickness: 65 m140 m300 m500 m1000 m1500 m fulldepletion(fd): 30v30v30 v75v200v350v operatingplateau: fdtofd+30v elementcapacitance: 20pftypical elementleakage current: 50natypically,200namaximum totalleakagecurrent: 1 atypically,3 amaximum totalalpharesolution: 55kevtypically (am241) daisychaining: yes metallising: 3000? metallisingtolerance: 1000? oxidewidth: subjecttodetectorthicknessselected otherdesigns: uhvversionswithinterstripresisto rs ceramicwithsiliconleadingedgeof500 m
30 qualityassurance:iso9001 bb1(ds) assembly. bb5(ds) assembly. bb7(ds) kapton assembly. bb7( ds) pcb assembly. bb8(ds) kapton assembly. bb9asse mbly. bb10 assem bly. compatiblewiththex3assembly.
31 design cc design cc design cc design cc specialist detectors for nuclear physics silicondetectortype: linearpadarray technology: 3inchsilicon design: ion implanted totally depleted ultra thin w indow detector for detection of protonsfrom10kev.thesuperthinwindowcoupled withlowleakagecurrent resolvesalphaparticlesto10kev(fwhm)anddetec tsbeta(electrons)from 1 kev. special guard ring techniques are used to m inimize crosstalk between adjacentpixels. activearea: 0.85cm 2 28x3mm 2 n o ofelements: 6 pixel0 6.6x3.0primary pixel1 4.4x3.0background pixel2 5.0x3.0primary pixel3 0.5x3.0highrate pixel4 3.6x3.0secondary pixel5 6.6x3.0primary thickness: 150 m(otherthicknessesavailable) thicknesstolerance: 10 m thicknessuniformity: 2 m fulldepletion(fd): 15vtypical,40vmax operatingvoltage: fdto2xfd elementcapacitance: 20pf elementleakage current20 o c: 10natypically,50namaximum guardring: surroundseachelementorminimumcross talk. alpharesolutionfwhm: 0.2%typically,0.5%maxim um metallising: 3000?onapertureandcontactsonly metallisingtolerance: 1000? packages: ceramicchipcarrier connectoroptions: goldplatedflyingleadsforpcb soldering. detectorpackage alignmenttoleance: 25 mtypically, 40 mmaximum radiationvibration: 3axis,20C2khz,60sectos pecification thermalshock: 55to+80 o cwithnoisemeasurements detectionendurance test: 168hours+55 o c radiationhardness: withstands300kradsitotald oseover4yearsflightperiod. wirebonding: ultrasonic50 maluminumwires/element flightqualification: randomvibration,temperature cycling,stabilitytest experiments: ceppad/ids:maxplanklindau/aerospac ecorporation qualityassurance:iso9001
32 design ee design ee design ee design ee specialist detectors for nuclear physics silicondetectortype: singlesidedcoursemicrostr ipdetector technology: 3inchsilicon design: ionimplantedtotallydepleteddccoupledm icrostripdesignwithstrippitch100 C650 mand16to64channels.thedevicefeaturesultra lowdarkcurrentsand excellent radiation hardness. the standard course p itch microstrips have been usedextensivelyinmajorphysicsexperiments. design ee1 ee2 ee3 ee4 experiment frascati aleph ua2 lhc activearea 12.5cm 2 10cm 2 5.2cm 2 5.7cm 2 active dimension 62.4x2mm 2 50x20mm 2 16x32mm 2 23.9x23.9 mm 2 n o channels 96 40 16 64 element length 20mm 50mm 32mm 24mm elementpitch 650 m 500 m 100 m 375 m thickness: 70,140,300,500and1000 m thicknesstolerance: 50 m thicknessuniformity: 5 m fulldepletion(fd): 30vtypical,60vmax operatingvoltage: fdto2xfd elementcapacitance: 80pf/cm 40pf/cm 25pf/cm elementleakage current: 1natypically,15namaximum totalleakagecurrent: 200natypically,300namax imum metallising: 3000? metallisingtolerance: 1000? oxideedgewidth: 500 m radiationhardness: neutrons i r = v =3.7x10 C17 a/cmtypically =fluence v=volume chiponlyprobetesting: yes packaged: ee1andee2only package: pcb minimumacceptance level: 100% additionaloptions: siloxscratchproofcoating qualityassurance:iso9001
33 design ff design ff design ff design ff specialist detectors for nuclear physics silicondetectortype: combinationdetector/photodi odepixelarray technology: 3inchsilicon design: ionimplantedtotallydepleteddccoupleds tructurewith5x5mm 2 pixelsion6 x8format.thedeviceissuitableforbothnuclear particleandphotondetection with incident particles on the rear ohmic common ca thode face and the electronics on the junction side readout at the edg e by an overlay with through bondingoneachpixel. activearea: 12cm 2 40x30mm 2 n o ofchannels: 48 elementpitch: 6mm readout: 100% thickness: 300 m 500 m 1000 m thicknesstolerance: 25 m thicknessuniformity: 5 m fulldepletion(fd): 30v 50v 150v operatingvoltage: fdtofd+20v elementcapacitance: 10pftypically elementleakage current: 5natypically,30n maximum totalleakagecurrent: 300natypically,1 amaximum metallisation: 8000?oncontactonly metallisationtolerance: 1000? package: pcbfanout minimumacceptance level: 100% csiinterfaceforx_ray &gammaraydetection: thesedetectorscaninterfac ewithacsifaceplatescintillatorontheohmicre ar face of the array grooving the scintillator to matc h the detector pixels minimisingcrosstalk.thisrearentryconceptwould alsobesuitableortheeht csi evaporated region without interfacing with the central function face. the structure with good electronics is capable of 5 % r esolution with the cs scintillator660kevgammas. experiement: universityofsouthamptonCintegral qualityassurance:iso9001
34 design ii design ii design ii design ii specialist detectors for nuclear physics silicondetectortype: singlesidedtrapeziodsingl eareapaddetector technology: 4inchsilicon design: silicon planar totally depleted ion implant ed detectors p on n resistivity silicon with over voltage capability. the detectors are all designed to have a leading silicon edge cut and located within 1 mm of the act ive region with packages optimized for minimum dead area over total 4 spherical surface. a perfect sphereof30cmdiametercanbebuiltfromassembli ngtrapezoid designationtype: ii1 ii2 ii3 ii4 activearea: 8.4cm 2 15cm 2 18.2cm 2 20.5cm 2 height: 46.73mm 46.95mm 43.44mm 43.57mm base: 25.53mm 37.98mm 45.49mm 48.64mm top: 10.45mm 25.86mm 38.09mm 45.56mm side: 47.34mm 47.34mm 43.59mm 43.60mm deadlayer: junction0.6 mmaximum,ohmic1.5 mmaximum thickness: 500 m thicknesstolerance: 25 m thicknessuniformity: 5 m fulldepletion(fd): 50vtypically,90vmaximum operatingvoltage: fdtofd+30% elementcapacitance: 210pf 375pf 445pf 512p f (typically) leakagecurrent: 250na 350na 400na 500na alpharesolution(am241):1%maximum responsetime: 10nstypically metallisation: junction1750? ohmic3000? metallissation tolerance: junction 50? ohmic 1000? oxidewidth: 1mm package: transmissionpcbkaptonleadtoconnector wirebonding: 2wires/detector minimumacceptance level: 100% experiments: indiana university silicon sphere of 1 5 cm diameter comprising of 160 detectors. itisusedatganilandcurrentlyattexasa&m. legnaroballalsousetheiidetectorsinitaly. qualityassurance:iso9001
35 design ll design ll design ll design ll specialist detectors for nuclear physics silicondetectortype: annulardetectors technology: 3inchsilicon design: annular quadrants, bullseyes and dual eleme nt detectors with thin entrance window suitable for low energy electron detection f rom 1 kev in electron microscopes. application: backscatteredelectrondetectorsandb eammonitors. designtype ll1 ll2 ll3 ll4 ll7 ll8 activediameter 35mm 24mm 18mm 10mm 16mm 18mm numberofannuli 1 1 1 1 4 7 centralholediameter: 5C10mm subjecttodesign thickness: 140 m 220 m 300 m 500 m n o ofelements: 2or4 thinwindowdesignation:type1(metalforcontacts only,lightsensitive) standardwindow designation: type2(metalcoatingoveractivearea elementleakage current(15v): 1natypically,30namaximum breakdownvoltage: 40vminimum (10 a) forwardvoltage(10ma): 1vmaximum metallisation: 3000 1000? package: pcb/ceramicwithpadcontact optional: flyingheads otherannulardesigns: annular quadrant microstrip with 128 channels for molecular biology applications.centerholecanbeprocessedto40mm ,thelargestrequesttodate. allphysicsdetectorsaretotallydepletedtransmis siondesigns. qualityassurance:iso9001
36 design nn design nn design nn design nn specialist detectors for nuclear physics silicondetectortype: singlesidedaccoupledmicr ostripdetector technology: 3inchsilicon design: silicon planar totally depleted ion implant ed detector p on n high resistivity silicon with over voltage capability. the detectors are all designed to have a leading silicon edge cut and located within 500 m of the active region. horizontalstripdetectorshavestripsperpendicula rtotheleadingedge.vertical stripdetectorshavestripsparalleltoleadingedg e.bothstripdesignsareoffered inrighthanded(rh)andleft(lh)handedversions. partdesignation: nn1 rh nn2 lh nn3 rh nn4 lf orientation: horizontal horizontal vertical verti cal activearea: 25cm 2 50x50mm 2 n o ofchannels: 50 elementpitch: 1mm readout: 100% thickness: 300 m 500 m thicknesstolerance: 15 m thicknessuniformity: 5 m fulldepletion(fd): 30vtypical,30vmaximum operatingvoltage: fdto2xfd elementcapacitance: 20pftypical elementleakage current: 10natypically,50namaximum totalleakagecurrent: 250natypically,500namax imum daisychaining: yes guardring: yesorfloating metallisation: 8000? metallisationtolerance: 1000? oxidewidth: 500 m radiationhardness: 1na/cm 2 /100rads package: pcblhorrh n o ofchannelsused: 48(outside2channelsarenotu sedonpcb) mimimumacceptance level: 100% experiments: cerndelphivsatcalorimeter qualityassurance:iso9001
37 design pp design pp design pp design pp specialist detectors for nuclear physics silicondetectortype: doublesideddccoupledmicr ostripdetector technology: 3inchsilicon design: ion implanted totally depleted dc coupled s tructure. excellent timing resolutions have been achieved in heavy ion physics experiments. detector available centrally located and corner located in p ackage. compatible with rutherfordappletonlaboratoryhybridelectronics. acticearea: 2.56cm 2 16x16mm 2 n o ofchannels: 96(48/side) elementpitch: 335 m readout: 100% thickness: 60 m 140 m 300 m 500 m thicknesstolerance: 15 m thicknessuniformity: 5 m fulldepletion(fd): 30vtypical,50vmaximum operatingvoltage: fdto2xfd elementcapacitance: 1pftypical elementleakage current: 3natypically,30namaximum totalleakagecurrent: 100natypically,300namax imum interstripresistance junctionside: 10m minimum,100m typically. interstripresistance ohmicside: 100m minimum,1m typically. guardring: yes metallisation: 3000? metallisationtolerance: 1000? oxidewidth: 500 m radiationhardness: 1na/cm 2 /100rads package: pcbwithcentralorcornerdetection fanout: standard amplifierinterface: 16channelhybrid mimimumacceptance level: 100% additionaloption: siloxscratchproofcoating experiments: sercdaresburycharissa/universityof edinburgh qualityassurance:iso9001
38 design tt design tt design tt design tt specialist detectors for nuclear physics silicondetectortype: singlesidedpositionsensit ivedetector technology: 4inchsilicon design: ion implanted totally depleted resistive po sition sensitive detector suitable for heavy ion physics and spectrometer applications. th e device complements design t and design aa which are being used in both heavy ionandnuclear structurephysics. acticearea: 18cm 2 180x10mm 2 n o ofchannels: 2 elementsize: 90x10mm 2 elementseparation: 200% thickness: 100 m 300 m500 m 1000 m thicknesstolerance: 25 m thicknessuniformity: 5 m fulldepletion(fd): 20v 30v 50 v 150v operatingvoltage: fdtofd+50v elementcapacitance: 500pftypical 200pftypica l100pftypical50pftypical elementleakage current: 30natypically,150namaximum totalleakagecurrent: 50natypically,300namaxi mum daisychain: yes positionresolution: 0.33%typically,1%maximum alpharesolution: 20kevtypically,60kevmaximum noiseresolution: 10kevtypically,30kevmaximum interanoderesistance: 5ktypically,10kmaximum metallisation: 3000? metallisationtolerance: 1000? single design tt-500 pcb assembly. package: pcbtransmission housing: metal190x40mm 2 case outputs: anode1,anode2,anode3,cathodeandcas e connector: sma,smb,conhexandmicrodot experiments: magneticspectrometeratuniversityof northcarolina qualityassurance:iso9001
39 design uu design uu design uu design uu specialist detectors for nuclear physics silicondetectortype: singlesideddccoupledpad detector technology: 3inchsilicon design: ion implanted totally depleted 3 element tr apezoid with 1 mm total depletion depth designed for efficient 1 mev electron positio n detection. six detectors formaperfectconewhenattachedtogether. experiemnt: argonneapex gsipagoda partdesignation: uu1 uu2 acticearea: 4.25cm 2 3.22cm 2 h=29mmb=16mmwith<87 o h = 24 mm b = 16 mm with<76 o n o ofchannels: 3 elementwidth: 4.5mmtypically readout: 100% thickness: 1000 m thicknesstolerance: 50 m thicknessuniformity: 5 m fulldepletion(fd): 150vtypically,200vmaximum operatingvoltage: fdtofd+50v elementleakage current: 30natypically,150namaximum totalleakagecurrent: 100natypically,250namax imum electronresolution: 5kevtypically,11kevmaximu m b1207(973kev) responsetime: 10nstypically,20nsmaximum timing: 5nstypically alpharesolution: 30kevtypically,60kevmaximum am241(5.486mev) guardring: tunedforminimumleakagecurrentonel ement metallisation: 3000? metallisationtolerance: 1000? oxideedgewidth: 1mm package: detectorchipassemblyandwirebonded typeofpackage: ceramic connector: verticalpins operatingtemperature range: 77C350k mimimumacceptance level: 100%(allelementsmeetingspecification) qualityassurance:iso9001
40 design vv design vv design vv design vv specialist detectors for nuclear physics silicondetectortype: singlesideddcorthogonals tripdetector technology: 3inchsilicon design: ionimplantedtotally depleted3multi elem entspacequalifiedstructures.large 36 mm active area. two designs with orthogonal read outs. vv1 with interstrip resistorsoperatingon4outputsandvv2with10ou tputswithoutresistors. experiemnt: nasaepact/wind/cgs nasaepact/lemt partdesignation: vv1 vv2 acticearea: 36cm 2 36cm 2 n o ofelements: 250 10(5/side) elementwidth: 4.5mmtypically n o ofoutputs: 4 10 interstripresistance: 200k 1m (ohmicside) crosstalk: 1%typically,2%maximum readout: 100% thickness: 140 m 1000 m thicknessuniformity: 3 m fulldepletion(fd): 20vtypically,40vmaximum 150vtypically,225vmaximum operatingvoltage: fdtofd+25v totalleakagecurrent: 3 atypically,5 amaximum responsetime: 20nstypically,50nsmaximum alpharesolution: 150kevtypically,250kevmaximu m am241(5.48mev) metallisation: 3000? metallisationtolerance: 1000? oxideedgewidth: 1mm package: detectorchipassemblyanddoublewirebon dedpositions typeofpackage: pcbintesthousingwithsmas contacts: pad connector: verticalpins operatingtemperature range: 40to+35 o c spacequalified: randomvibration/temperaturecycli ng/stabilitytest operatingenvironment: vacuum mimimumacceptance level: 100%(allelementsmeetingspecification) qualityassurance:iso9001
41 design yy design yy design yy design yy specialist detectors for nuclear physics silicondetectortype: siliconmicrostriptrapezoid orwedgeshapestructure technology: 4inchsilicon design: ionimplantedtotallydepletedseriesofde tectorsofwedgeshapethatsubtends22.5 o or 45 o forconstructionalong360 o discannularmicrostriponbothradialandaxiald irection. bothacanddcdesignsinsingleanddoublesided formatareavailableintheseriesfor heavyionandhighenergyphysicsapplications. experiemnt: iisn(belgium) d (fdiscfermi) delphi(cern) partdesignation: yy1 yy2 yy3 activeinnerdimensions: 55mm 24mm 71mm activeouterdimensions: 130mm 103mm 125mm n o ofjunctionelements: 16 1024 496 n o ofohmicelements: 1 1024(30 o ) 1 activearea: 29cm 2 27cm 2 41cm 2 n o ofsectors: 16 12 16 sectorsubtends: 45 o 30 o 22.5 o detectoredgesurround: 0.5mm 1mm 0.5mm junctionpitch: 5mm 50 m 1.7mm ohimcpitch: n/a 50 m n/a thickness: 300 m 300 m 300 m thicknesstolerance: 15 m 15 m 15 m thicknessuniformity: 5 m 5 m 5 m fulldepletion(fd): 30vtyp,50vmax 30vtyp,50vmax 30vtyp,50vmax operatingvoltage: fdtofd+30v fdto fd+30v fdtofd+30v breakdownvoltage(10 a): >2xfd >2xfd >2xfd elementcapacitance: 50pf 90pf 100pf otherthicknessrange: 60 m,100 m,140 m,300 m,500 mand1000 m elementleakage current: 20natyp,100namax 1natyp,10n amax 10natyp,50namax guardring: n/a 1 amax 1 amax totalalpharesolution: 100kev n/a n/a (fwhm)/sector totalnoise(fwhm)/sector: 75kev n/a n/a pulseresponsetime: 10nstyp 10nstyp 10n styp metallising: 3000? 8000? 8000? metallisingtolerance: 1000? 1000? 1000? typeofpackage: pcb chiponly chip only supportstructure: motherboard connector: idcheader(2x17) n/a n/a packagestripaccuracy: 200 m n/a n/a detectorstripaccuracy: 2 m 2 m 2 m couplingcapacitor: n/a 100pf 100pf biasingresistor: n/a 2m polysilicon 100m foxfet mimimumacceptancelevel: 100% 100% 100% interfaceelectronics: rutherford16ch fermisv xii cernamplex wirebonding(al/si): 25 m 1725 m 25 m radiationhardnesscoef: 10a.cm 10a.cm 10 a.cm readoutpitch: n/a 52 m n/a experimentalradiation level: 10ions 1mrads 1mrads passivationcoating: n/a silox n/a holesthrudetectorfor scintillatingfibres: n/a n/a 16 experiments(yy1,leda): universityofedinburgh universityofyork infncatania,italy triumf,canada qualityassurance:iso9001
42 design yy1 design yy1 design yy1 design yy1 silicon trapezoid dc microstrip detector totalassemblyactivearea 232.00cm 2 totaln o junctionchannels 128 totaln o ohmicsectors 8 detectorthicknessshown 300 m package pcb/motherboard qualityassurance:iso9001
43 triple alphabet design design aaa design aaa design aaa design aaa specialist detectors for nuclear physics silicondetectortype: doublesideddcdetector technology: 4inchsilicon design: dc detector featuring triple position sensi tivity with dual anode with resistor division on junction side and orthogonal strips on the ohmic side with resistor divisioninreadoutbankstominimizetheumberof outputs. experiemnt: rikkouniversity,japan jaeri,japan partdesignation: aaa1 aaa2 acticearea: 41cm 2 44cm 2 64x64mm 2 77x57mm 2 thickness: 300 m 370 m thicknesstolerance: 15 m 15 m thicknessuniformity: 5 m 5 m fulldepletion(fd): 50vmaximum 50vmaximum operatingvoltage: 30v 40v elementcapacitance: 130pf 125pf elementleakage current: 200na 200ns guardring: floating floating totalalpharesolution: 150kevmax 200kevmax fwhm interanoderesistance: 1k minimum 1k minimum metallisation: 10000? 10000? metallisationtolerance: 1000? 1000? package: pcb pcb connector: verticalheaders verticalheaders detectorpackage alignment: 100 m 100 m n o ofjunctionoutputs: 12 15 n o ofohmicoutputs: 16 8 n o ofstripsperchain: 8 16 radiationhardness/cm 2 : 10heavyions,10lightions,10protons,10neut rons wirebonding: ultrasonic25 m qualityassurance:iso9001
44 design bbb design bbb design bbb design bbb specialist detectors for nuclear physics silicondetectortype: doublesidedacdetector technology: 4inchsilicon design: double sided ac coupled orthogonal r andrzreadoutwith polysilicon bias resistors. experiemnt: babar partdesignation: bbbi ii iii iv v vi activedimensionsr ( mm ) :41 49 71 53 53 53 activedimensionsrz ( mm ) :42 45 44 68 54 68 strippitchr ( m ) : 50 55 55 50 50 50C41 strippitchrz( m): 50 50 50 105 100 100 n o ofstripr 799 874 1275 1023 1023 1023 n o ofstriprz 821 881 859 631 525 667 thickness: 300 m thicknesstolerance: 15 m thicknessuniformity: 5 m fulldepletion(fd): 20v operatingvoltage: fdto3xfd couplingcapacitance: 200pf biasresistor: 5m elementleakage current: 1na totalcurrent: 3 amaximum guardring: 10na metallisation: 0.8 m metallisationtolerance: 0.1 m package: chiponly radiationhardness: 1mrad grades: gradea+ experimental99%minimum/side gradea experimental97%minimum/side gradeb+ study90%minimum/side gradeb trial80%minimum/side gradec mechanicalCnonoperational qualityassurance:iso9001
45 design ddd5 design ddd5 design ddd5 design ddd5 ac coupled ion implanted totally depleted double si ded double metal microstrip detector silicondetectortype: ac coupled ion implanted tot ally depletedsiliconmicrostripdetector. design: doublesided,twometallayersonnn+ 6inchwafertechnology. junctionside n o strips: 384 strippitch: 50 m ohmicside firstmetal n o strips: 768 strippitch: 153.5 m secondmetal n o strips: 384 strippitch: 49.5 m polysiliconresistor: 2.5 0.5m couplingcapacitor: 100pf siliconthickness: 300 10 m chipdimensions: 120.125x21.2mm 2 fulldepletionvoltage(fd): 50vmaximum operatingvoltage: fdto2fd experiments: d 2 ,fnal qualityassurance:iso9001
46 design eee design eee design eee design eee ac coupled ion implanted totally depleted double si ded microstrip detector p+n junction side nn+ ohmic side design: double sided, 6 inch wafertechnology. junctionside n o strips: 512 strippitch: 112 m ohmicside n o strips: 512 strippitch: 112 m stripgeometry: 1.2 o with respect to thepsidestrips polysiliconresistor: 2.5 0.5m couplingcapacitor: 15pf/cm siliconthickness: 300 10 m chipdimensions: 59.3x74.7mm 2 fulldepletion voltage(fd): 50vmaximum operatingvoltage: fdto2fd experiments: cdf,fnalupgrade qualityassurance:iso9001
47 design fff design fff design fff design fff ac coupled ion implanted totally depleted double si ded wedge microstrip detector silicondetectortype: ac coupled ion implanted totally depleted silicon microstripdetector. design: double sided wedge, 4 inch wafertechnology. junctionside n o strips: 1024 strippitch: 50 m ohmicside n o strips: 768 strippitch: 62.5 m polysiliconresistor: 2.5 0.5m couplingcapacitor: 100pf siliconthickness: 300 10 m chipdimensions height: 79.21mm base: 59.21mm top: 16.73mm fulldepletion voltage(fd): 50vmaximum operatingvoltage: fdto2fd experiments: d 2 ,fnalupgrade qualityassurance:iso9001
48 design ggg design ggg design ggg design ggg ac coupled ion implanted totally depleted double si ded wedge microstrip detector silicondetectortype: ac coupled ion implanted tot ally depleted siliconmicrostripdetector. design: doublesidedwedge,4inchwafertechnology . junctionside n o strips: 640 strippitch: 50 m ohmicside n o strips: 512 strippitch: 62.5 m stripgeometry: 2 o withrespecttopsidestrips polysiliconresistor: 2.5 0.5m couplingcapacitor: 100pf siliconthickness: 300 10 m chipdimensions: 60.0x34.0mm 2 fulldepletionvoltage(fd): 50vmaximum operatingvoltage: fdto2fd experiments: d 2 ,fnalupgrade qualityassurance:iso9001
49 d dd design hhh esign hhh esign hhh esign hhh ac coupled ion implanted totally depleted double si ded wedge microstrip detector silicondetectortype: ac coupled ion implanted tot ally depletedsiliconmicrostripdetector. design: double sided wedge, 6 inch wafer technology junctionside n o strips: 516 strippitch: 160 m ohmicside n o strips: 516 strippitch: 160 m polysiliconresistor: 2.0 0.5m couplingcapacitor: 16pf/cm siliconthickness: 300 10 m chipdimensions height: 115.9mm base: 23.2mm height: 85.4mm fulldepletionvoltage(fd): 50vmaximum operatingvoltage: fdto2fd experiments: hermes,desy qualityassurance:iso9001
50 design lll design lll design lll design lll r and phi detector for particle physics silicondetectortype: double sided, ac coupled met al semicircular microstrip detector with multiguardrings. design: this pstrips on n design includes a double metal layer for readout of the inner strips. the wafer layout includes 2 rdet ectors and a single phi detector that can sustain operation in ahigh r adiationenvironment upto6x10 14 protons/cm 2 orequivalentneutrons. . phidetector rdetector phi detector r detector wafertechnology 6inch wafertechnology 6inch thickness * 200&300 m thickness 200&300 m silicon standardor oxygenated silicon standardor oxygenated inneractivediameter 8mm inneractivediameter 8 mm inneractivediameter 40mm inneractivediameter 4 0mm n o strips/side 2048 n o strips/side 2048 strippitch 24C55 m strippitch 13C92 m stripwidth 16C28 m stripwidth 12C63 m polysiliconresistors 1m polysiliconresistors 1m couplingcapacitance 80pf couplingcapacitance 50 200pf fulldepletion(fd)voltage 50vmax fulldepletion (fd)voltage 50vmax operatingvoltage 200v operatingvoltage 200v experiment: lhcbcern qualityassurance:iso9001
51 design mmm design mmm design mmm design mmm double sided 60 o wedge detector for radioactive beam physics frontjunctionside rearohmicside silicondetectortype: doublesideddcstripdetec tor tecnology: 6inchsilicon experiments: hyballandtiara activearea: 54000mm 2 innerradius: 32.6mm outerradius: 135.1mm n o annularjunctionstrips: 16 strippitch: 6.4mm n o radialohmicstrips: 8 sectorangle: 6.8 o detectorthickness[ e]: 150 m detectorthickness[e]: 400 m depletionvoltage[e]: 100vmax package: pcbtransmissionwithtracking. readoutfromoneendofstripsvia3m,50way connectorwith sidelatches,partn o 34336602. experiments: hyball,ornlusa tiara,universityofsurreyuk qualityassurance:iso9001
52 design ooo design ooo design ooo design ooo specialist detectors for particle physics a highvoltagedetectoremployedbycdf00atfnal 3tevtevetron.thedetectorresidesclosetothe collider beam being exposed to 10 14 protrons/cm 2 . this detector is available as standard or oxygena ted version.thepreirradiationoperatingvoltagecapa bilityofthisdeviceis1000v. silicondetectortype: ac coupled ion implanted tot ally depletedsiliconmicrostripdetectorwith poweredguardrings. design: singlesided,6inchwafertechnology. junctionside n o strips: 256 strippitch: 25 m siliconthickness: 150,300,400 m activeareadimensions: 78.4x8.43mm 2 fulldepletionvoltage(fd): 60vmaximum operatingvoltage: 600vtypical,1000vmax minimumacceptancelevel: 100% experiment: cdf,fnal qualityassurance:iso9001
53 design qqq1 design qqq1 design qqq1 design qqq1 90 o single area pad detector thisdetectoristobeusedinconjunctionwiththe r/ detector qqq 2onacommonmotherboard. front junction side silicondetectortype: singlearea90 o paddetector tecnology: 3inchsilicon detectorthickness: 40 m activearea: 1731.0mm 2 angle: 82 o innerradius: 9.0mm outerradius: 50.0mm fulldepletion(fd): operatingvoltage: totalleakagecurrent: totalresolution(am241): package: 90 o recesseddoublesidedtransmissionpcbwithrearg roundplane. material:fr4 dimensions depth=2.0mm outerradius=61.0mm innerdimension=7.4mm mounting:4positionswitha ? 2.2mm connection: 2x5rowunshroudedverticalor90 o pinheader experiment: iisn qualityassurance:iso900
54 design qqq2 design qqq2 design qqq2 design qqq2 single or double sided 90 o cd detector front junction side rear ohmic side silicondetectortype: doublesideddcstripdetec tor tecnology: 4inchsilicon junctionwindow: standard: 0.5 m thin: 0.1 m detectorsareavailableasopticalornucleardevi ces. activearea: 1139.0mm 2 innerradius: 9.0mm outerradius: 41.0mm n o annularjunctionstrips: 16 strippitch: 2.0mm stripseparation: 0.1mm n o radialohmicstrips: 24 sectorangle: 3.4 o fulldepletion(fd): operatingvoltage: totalleakagecurrent: totalresolution(am241): package: 90 o recessedsinglesided 90 o recesseddoublesided transmissionpcb. transmissionpcb. material:fr4 material:fr4 dimensions dimensions depth=2.4mm depth=2.4mm outerradius=61.0mm outerradius=61.0 mm innerdimension=7.4mm innerdimension=7 .4mm mounting:6positionswitha mounting:6posit ionswitha ? 2.2mm ? 2.2mm connection: samtecconnector 50wayconnectorw ithlatches ftsh11701ldej 3m81050660301 experiments: iisn,rexisoldeatcern,universityo fyork triumphcanada,dinexspain qualityassurance:iso9001
55 design rrr design rrr design rrr design rrr single sided wedge detectors for radioactive beam p hysics silicondetectortype: singlesidedsegmentedtra pezoid tecnology: 6inchsilicon chimera 5-300 assembly chimera experiments with a ll 9 rings mounted. chip activearea ring elements length um width1 um width2 um length um width1 um width2 um window type metal coverage wafer size guard ring design package 1 2 106600 63200 23700 99100 62250 22850 2,7&9 m &tt 6 sgr standard fr4 2 2 111650 63100 35600 10415 62100 34700 2,7&9 m &tt 6 sgr standard fr4 3 2 111400 59600 39150 10390 58600 38250 2,7&9 m &tt 6 sgr standard fr4 4 2 115600 56500 39600 10810 55500 38650 2,7&9 m &tt 6 sgr standard fr4 5 2 100850 62950 48450 93350 61950 47550 2,7&9 m &tt 6 sgr standard fr4 6 2 89400 56850 46400 81900 55850 45450 2,7&9 m &tt 6 sgr standard fr4 7 2 103300 61800 49800 95800 60800 48850 2,7&9 m &tt 6 sgr standard fr4 8 2 89350 62950 52950 81850 61950 52000 2,7&9 m &tt 6 sgr standard fr4 9 2 112650 64800 52450 10515 63800 51550 2,7&9 m &tt 6 sgr standard fr4 10 4 51350 54650 27700 49300 52030 26150 2 m 4 sgr chiponly 11 4 66100 71300 38300 64100 68730 36740 2 m 4 sgr chiponly siliconthickness: 150,300,400 m connector: package: standardfr4pcbwithsiliconsupportononeedge tominimize materialradiationlengths. experiments: chimeraandindra qualityassurance:iso9001
56 design sss design sss design sss design sss ac coupled ion implanted totally depleted single si ded micronstrip detector with multi-guardring design f or high radiation environment silicondetectortype: ac coupled ion implanted tot ally depleted siliconmicrostripdetector. design: single sided, multiguard ring design for h igh radiationenvironment,6inchwafertechnology. junctionside n o strips: 1024+2 strippitch: 61 m polysiliconresistor: 4.5 0.5m couplingcapacitor: 100pf siliconthickness: 300 10 m chipdimensions: 62.6x60.3mm 2 fulldepletionvoltage(fd): 50vmaximum operatingvoltage: fdto2fd experiments: cms,cern qualityassurance:iso9001
57 design ttt design ttt design ttt design ttt ac coupled ion implanted totally depleted double si ded 90 o micronstrip detector with multi-guard ring silicondetectortype: accoupledionimplantedtot allydepletedsiliconmicrostripdetector. design: double sided, multiguard ring design for h igh radiation environment, 6 inch wafer technology. . junctionside n o strips: 128 strippitch: 758 m ohmicside n o strips: 128 strippitch: 758 m polysiliconresistor: 10C80m couplingcapacitor: 1000pf siliconthickness: 300 10 m activearea dimensions: 97.3x97.3mm 2 chip dimensions: 99.0x99.0mm 2 fulldepletion voltage(fd): 50vmaximum operatingvoltage: fdto2fd quality: 100% acceptancelevel: 100% experiments: tigre,nasa desy,hermes blast,mit ge6,univofedinburgh qualityassurance:iso9001
58 design ttt design ttt design ttt design ttt packages design ttt-300 single sided minimum area pcb doublesidedpcb biasingviaastripheadersamtecpartno.ftsh102 01ld readoutfrombothendsofstripviasamtecconnecto rpartno.asp3249401 pcbdimensions133x128mm 2 design ttt-300 double sided minimum area pcb doublesidedpcb biasingviaastripheadersamtecpartno.ftsh102 01ld readout from both ends of strip via samtec connecto r part no. asp3249401 pcbdimensions133x128mm 2 design ttt-300 double sided standard pcb doublesidedpcb biasingviaastripheaderrsno.334555 readoutfromoneendofstripsvia hiroseconnector partno hif632pa1.27dsa pcbdimensions220x128mm 2
59 design xxx2 design xxx2 design xxx2 design xxx2 detector and kapton assembly qualityassurance:iso9001
60 design xxx3 design xxx3 design xxx3 design xxx3 e/dx and e/dx pixelated detector with multi-guard r ings silicondetectortype: dccoupledionimplantedtot allydepletedsiliconpixelateddetector. technology: 4inchwafertechnology. design: single sided pixelated device with a multi guard ring design for high radiation environment operation. thickness: 500 m geometry pixel1: 1.27x1.27mm 2 pixel2: 5.65x6.35mm 2 thin window element 2 heavyandneutralion,alpha, lowenergyproton detector. pixel 1 pixel 2 pixel 1 pixel 2 standard window element 1 electrondetector implantwindows: element1(type3): 0.5 m element2(type9): 0.1 m fulldepletion(fd): <100v operatingvoltage: fdtofd+30v element1leakage current: 25na element2leakage current: 25na totalleakagecurrent: 50na alpharesolutionelement2:12kevfwhm metallising: element1: 10,000? overactivearea element2: 3000? aroundperipheryofactivearea package: thechipisrecessedinanontransmission fr4pcb dimensions=14.9x11.5x4.4mm 3 mountingholes, ? 1.6mm,areseparatedby12.0mm connection: solderpads minimumacceptance level: 100% experiments: mercurymessenger qualityassurance:iso9001
61 design zzz design zzz design zzz design zzz single sided dc microstrip detector silicondetectortype: dc coupled ion implanted tot ally depleted silicon microstrip detector which can be tailored for single sided pn devices or nn double sided devices. the device has a multiguardringdesignforhighradiationenvironm entoperation. technology: 3inchwafertechnologyfornndesign 4inchwafertechnologyforpndesign thickness: 651000 m pndevice: junctionside n o strips: 20 strippitch: 1000 m stripwidth: 900 m striplength: 7000 m nndevice: junctionside singlelargearea: 20000x7000 m 2 (shallowimplant) ohmicside n o strips: 20 strippitch: 1000 m stripwidth: 900 m striplength: 7000 m chipdimensions: 20000x7000 m 2 package: thechipisrecessedinatransmissionfr4 pcb dimensions=18.5x25.5x1.0mm 3 mountingholes, ? 1.6mm connection: junkoshaminiaturecoaxialcable minimumacceptance 100% (thisdetectorisalsoavailableasastandardsing lesidedpn32channelchiponlydetector) qualityassurance:iso9001
62 miscellaneous series miscellaneous series miscellaneous series miscellaneous series novel detectors the devices listed below can be ordered in small qu antities on a variety of thicknesses currently stoc ked. not all thicknesslistedbelowarealwaysavailable. silicondetectortype: dcdiodes design: totallydepletedionimplantedstructuresw ithguardringtoenable highvoltageoperatingplateau. technology: 3,4and6inchsilicon. design detector name geometry dimension chip dimension window type metal coverage guard ring design wafer size inch package msa002/009 element 1 activeareadiameter=0.2mm element 2 activeareadiameter=7.0mm n o annuli=2 annularseparation=100 m 9.0x9.0mm 2 2 m mgr 6 chiponly msa003/014 element 1 activeareadiameter=0.1mm element 2 activeareadiameter=7.0mm element 3 activeareadiameter=12.0mm n o annuli=3 annularseparation=100 m 14.0x14.0mm 2 2 m mgr 6 chiponly msa004/009 totalactivearea diameter=9.8mm n o annuli=4 annularpitch=1250 m annularseparation=100 m 13.0x13.0mm 2 2 m mgr 4 chiponly msa005/009 activeareadiameter=9.8mm n o annuli=5 annularpitch=1000 m annularseparation=100 m 13.0x13.0mm 2 2 m mgr 4 chiponly msa010/009 activeareadiameter=9.8mm n o annuli=10 annularpitch=500 m annularseparation=100 m 13.0x13.0mm 2 2 m mgr 4 chiponly mscq009 activeareadiameter=9.8mm quadrantseparation=50 m 13.0x13.0 mm 2 2 m mgr 4 chiponly msd0013 activeareadiameter=1.3mm 3.3x3.3 2,7&9 m mgr 4 chiponly msd004 activeareadiameter=4.0mm 7.0x7.0mm 2 2,7,9 m,p& tt sgr 4 pcb msd005 activeareadiameter=5.0mm 10.0x10.0 mm 2 2 m mgr 4 pcb msd0051 activeareadiameter=5.0mm 7.0x7.0mm 2 2,7,9 m mgr 6 pcb qualityassurance:iso9001
63 miscellaneous series miscellaneous series miscellaneous series miscellaneous series novel detectors msd0056 activeareadiameter=5.0mm 8.7x8.7mm 2 2,7,9 m mgr 6 pcb msd057 activeareadiameter=5.692mm 15.4x15.4 mm 2 2 m mgr 4 pcb msd009 activeareadiameter=9.8mm 13.0x13.0 mm 2 2 m mgr 4 pcb msd010 activeareadiameter=10.0mm 13.0x13.0 mm 2 2 m mgr 4 pcb msx00 activearea= 4.25x1.75 6.25x3.75 2 m mgr 4 chiponly msx004 activearea= 2.0x2.0 4.0x4.0 2 m single& mgr 6 chiponly msx014 activearea= 7.0x2.0 9.0x4.0 2 m mgr 6 chiponly msx7 * activearea= 2.646x2.646 4.646x4.646 2,7,9 m mgr 4&6 chiponly msx029 activearea= 1.7x1.7 3.7x3.7 2,7,9 m mgr 4 chiponly MSX031 * activearea= 3.162x3.162 6.162x6.162 2,7,9 m mgr 4 chiponly msx4x4 * activearea= 4.0x4.0 6.0x6.0 2,7,9 m mgr 4 chiponly msx05 activearea= 5.0x5.0 7.0x7.0 2 m mgr 6 chiponly msx072 activearea= 9.0x8.0 11.0x10.0 2 m mgr 6 chiponly mspx040 activeareapixel= 1400x1400 m 2 pixelarray=4x4 9.10x9.10 2 m mgr 4 chiponly mspx041 activeareapixel= 900x900 m 2 pixelarray=4x4 9.10x9. 2 m mgr 4 chiponly mspx 100x64 activeareapixel= 89.0x39.0 m 2 pixelarray=100x64 14.5x15.0 2 m mgr 4 chiponly mspx 128x96 activeareapixel= 89.0x39.0 m 2 pixelarray=128x96 17.5x22.15 2 m mgr 6 chiponly msq05 activequadrant=5.0x5.0mm 2 dimensions quadrantseparation=100 m 12.1x12.1 mm 2 2 m mgr 4 chiponly qualityassurance:iso9001
alphabet summary single alphabet index design wafer diameter inch active dimensions mm type element length mm pitch m n o channels standard thickness m thickness range m package experiment a* 1 35x24 ssm 15 20 1200 300 501000 chiponly cerndelphi b 3 50x50 ssm 50 50 1000 300 501000 pcbfanou t cernna14/e789 c* 3 50x50 ssm 50 50 1000 300 501000 pcbfano ut fermie653 d* 3 32x59 ssm 62 25 1200 300 501000 chiponly cerndelphi e* 3 50x50 ssm 50 50 1000 300 501000 pcbfano ut fermie653 f 3 50x50 ssm 50 2000 25 300 501000 pcb edinbu rgh g 3 50x50 q 25 n/a 4 300 501000 pcb gsi h* 3 60 pad n/a n/a 12 300 501000 chiponly okla homa i 3 60x40 ssm 40 8500 7 300 501000 pcbedge ce rnua2 j 3 60x40 ssm 40 210 28 300 501000 pcbedge ce rnua2 k 3 50x50 ssm 50 50/100 688 300 501000 pcb/kap ton fermie687/e771 l 3 50x50 ssm 50 25/50 688 300 501000 pcb/kapt on fermie687/e771 m 4 90x35 ssm 90 25 700 300 100500 pcbfanout fermie653 n 4 90x35 ssm 90 50 700 300 100500 pcbfanout fermie653 o* 3 60x32 dsm 60 25 512 300 501000 chiponly cerndelphi p 3 20x20 ssm 20 2000 10 300 501000 pcb edinbu rgh q 3 10x10.4 ssm 10 20 520 300 501000 chiponly cernomega r 3 60 ssar n/a n/a 384 300 501000 motherboard/ ceramic cernomega s 4 96 dsar n/a n/a 80 300 100500 pcb heidelberg t 3 50x10 psd 50 10000 1 300 501000 pcb/metal housing sercoxford u 4 75x57 ssm 75 50 512 300 100500 chiponly f ermicdf v 4 77x57 ssm 57 300 256 300 100500 pcb/kapton fermie687 w1 3 50x50 dsm 50 300 32 300 501000 pcb onl/w ashington w2 4 50x50 ssm/ 50 500 100 300 701000 pcb napo li x 3 50x50 ssmpds 50 3120 16 300 1401000 pcb s erc/edinburgh y 4 9015 ssm 90 30 512 300 100500 chiponly slacmkii z* 3 50x50 ssmq 25 500 192 300 501000 pcb llnl nova *indicatesobsoletedesigns ssm singlesidedmicrostrip ssar singlesidedannular q quadrant psd positionsensitivedetector la lineararray dsmdoublesidedmicrostrip dsardoublesidedannu lar ppixel ssdmmsinglesideddoublemetalmicro strip
double alphabet index design wafer diameter inch activedimensions mm type elementlength mm pitch nochannels standard thickness m thickness range m package experiment aa 3 12x12 psd 12 n/a 1 140 601500 pcb charissa bb1 3 40x40 dsm/dc 40 1mm 80 300 601500 pcb argo nne/ornl bb2 3 24x24 dsm/dc 40 1mm 48 300 601500 pcb nasa (mars) bb4 3 70diameter dsm/dc variable 1mm 128 300 6015 00 pcb nasaace bb5 4 32x32 dsm/dc 32 400m 160 60 601500 pcb ar gonne cc 3 28x30 pad 25 variable 6 150 501500 ceramic ceppad dd 3 25x25 ssm/dc 25 25m 1048 300 601500 quartz cernomega ee1ee4 3 microstrips ssm/dc 2050 100um650m 16/26/40/64 300 140500 pcb cernaleph/ua2/lhc ff 3 40x30 pad 5 6mm 48 300 3001500 pcb esainte ral gg 4 85 dsm/ac 85 60m 256/384/512/768 300 100500 chip fermicdfsvxii hh 4 10.25x15.38x50.41 ssm/dc 50 40m/60m 256 300 100500 chip sscsdc ii 4 wedge pad 45 n/a 1 500 100500 pcb/kapton indi anaspere kk 3 47atvariable ssm/dc 47 1mm 47/44 300 n/a kev lar delphisat ll1ll4 3 1035diameter q circular n/a 4 250 65300 pcb/ce ramic electrondetectors mm 3 180x15 ssp 10 10mm 18 300 100500 pcb crres nn 3 50x50 ssm/dc 50 1mm 50 300 140500 pcb cern delphi pp 3 16x16 dsm/dc 16 335m 96 60 601500 pcb argo nne/ornl qq 3 10x5.2 ssm/dc 10 10m 520 150 300 chip cern omega rr 3 7x14 lineararray 4.84 2.39mm 3 1000 601500 pcb lanl/cluster ssm singlesidedmicrostrip ssar singlesidedannular q quadrant psd positionsensitivedetector la lineararray dsm doublesidedmicrostrip dsar doublesidedannular p pixel ssdmm singlesideddoublemetalmicrostrip
double alphabet index design wafer diameter inch activedimensions mm type elementlength mm pitch nochannels standard thickness m thickness range m package experiment tt 4 18x10 psd 180 2 300 1001000 pcb duke uu 3 29x24x16 pad 29or24 4.5mm 3 1000 601500 ceramic argonne uu2 3 29x24x16 pad 29or24 4.5mm 3 1000 60150 0 ceramic gsitrapezoid w1 3 68diameter ssm/dc variable 500m 250 140 140 1500 pcb nasaepact/wind w2 3 orthogonal36 ssm/dc variable 500m 10 1000 14 01500 pcb nasaepact/lemt ww 4 80x36 psd 36 26.7mm 3 500 100500 pcb/housin g gsimultielement xx 3 wedge ssm/dc variable variable 96 300 140500 chip cernl3 yy1 4 wedge ssm/dc variable 5mm junction 16 300 601500 pcb iisn/leda yy2 4 wedge dsm/ac variable 50m 2048 300 601500 c hip dzerofdisk yy3 4 wedge ssm/dc variable 1.7mm junction 31 300 601500 chip cerndelphi zz1,zz2 3 13x13and20x20 pads 1320 stacks 2or3 500 651500 pcb spacetelescopes ssm singlesidedmicrostrip ssar singlesidedannular q quadrant psd positionsensitivedetector la lineararray dsm doublesidedmicrostrip dsar doublesidedannular p pixel ssdmm singlesideddoublemetalmicrostrip
triple alphabet index design wafer diameter inch n o . devices perwafer dimensions (mm) device type details pitch junctionohmic n o channels junctionohmic orientation thickness m packaging experiment aaa1 aaa2 4 2 64x64 77x57 dsmpsd exoticdcdoublesidedpsdmicrostrip 12 15 16 8 90 651000 pcbreadout bbbi bbbii bbbiii bbbiv bbbv bbbvi 4 4 41x42 49x45 71x44 67x52 54x52 dsm/dc rectangulardcdoublesidedmicrostrip 50 55 55 50 50 5041 50 50 50 105 100 100 799 874 1275 1023 1023 1023 821 881 859 631 525 667 90 300 chiponly babar ccc 6 2 74.3x40.3, 70.4x60.17 dsm/ac rectangularacdoublesidedmicrostrip 1.2 300 chiponly cdfsvx ddd5 6 1 120x21 dsm/ac rectangularacdoublesideddoublemetal 50 153.5 49.5 384 768 384 90 300 chiponly d ? eee 6 1 74.7x59.3 dsm/ac rectangularacdoublesidedstereomicrostrip 112 1 12 512 512 1.2 300 pcbcoaxial readout cdfisl fff 4 1 59x79x17 dsm/ac fwedgetrapezoidacdoublesidedmicrostrip 50 62. 5 1024 768 30 300 chiponly d ? ggg 4 1 60x34 dsm/ac square2stereoacdoublesidedmicrostrip 50 62.5 640 512 2 300 chiponly d ? hhh 6 1 85x115x23 dsm/ac trapezoidacdoublesidedmicrostrip 516 516 160 16 0 30 300 chiponly desy hermes iii 3 2 50x50 ssm/dc dsm/dc ind/msu/wae/edcsingle/doublesidedmicrostrip 90 65/500/1000 pcbkapton readout jjj 4 2 50x26x66 ssm wedgesinglesidedradial stripspaddetectors 0 300 chiponly desyh1 kkk 3 3 53x53, 74.5x53 rectangularaccoupledlong/short/wedge 0 3 00 chiponly phenex lllphi lllr 6 2 innerradius10, outerradius50 ssdmm/ ac r&phisemicircleshapedacsinglesided 2455 1392 2048 2048 200/300 chiponly lhcb mmm 6 2 innerradius32.6, outerradius135.1 dsm/ac 57wedgedoublesideddcradialandaxialstrips 6 .4 6.8 o 16 8 150/400 pcbreadout hyball ooo 6 1 78.4x8.43 ssm/dc rectangularacsinglesidedmicrostrip 25 256 0 300 chiponly cdf00 ppp 4 4 40x40, 30x35 pad pentagonsingle/multielementpads 140/ 1000 pcbcoaxial readout euroball qqq1 qqq2 3 2 40x40, 30x35 dsm/dc dcdoublesided90pad dcdoublesided90radial/axialstripand 35/65/ 500/1500 pcbreadout rexisolde rrr 6 4 65x62 pad chimeratrapezoidsinglesided dualpaddetector 35/65/ 500/1500 pcbreadout chimera ssm singlesidedmicrostrip ssar singlesidedannular q quadrant psd positionsensitivedetector la lineararray dsm doublesidedmicrostrip dsar doublesidedannular p pixel ssdmm singlesideddoublemetalmicrostrip
triple alphabet index design wafer diameter inch n o . devices perwafer dimensions (mm) device type details pitch junctionohmic n o channels junctionohmic orientation thickness m packaging experiment sss 6 2 64x60 ssm/ac rectangularalsinglesidedmicrostripwithmultigu ard 61 1024+2 0 300 chiponly cms ttt 6 1 99x99 dsm/ac rectangularacdoublesidedmicrostripforspace 75 8 758 128 128 90 300 chiponly tigre uuu1 uuu2 6 1 106.8x64 89.5x89.5 ssm/ac rectangularacsinglesidedmicrostripforspace 194 228 320 384 0 300/400 chiponly glast vvv 3 2 diameter15and7 q singlesided5sectorq uadrantbullseyepaddetectors 15/35/ 300/500 pcbtube lear www 3 2 40.4x5, 40.4x4.5 ssm/dc rectangularsinglesideddc128channelmicrostrip 0 1000 pcb graal xxx 3 1 50x25 p thin750?windowpixelarrayfor spaceresearch 399 pcbkapton readout image xxx2 4 1 innerradius3, outer35 sss/dc archemidesswirldetector 65/140/300/5 00 pcbkapton readout cosy xxx3 4 1 14.7x8.5 ssp pixelatedstandardandthin windowdetector 300/400 pcb mercury messenger yyy 3 2 28.2x3 la thin750?windowlineararrayf orspaceresearch 140/1500 dilpackage cappa d zzz 4 6 7x24 ssm/dc rectangularsinglesidedmicrostripforspaceresea rch 1000 20 0 300/400 pcb imex ssm singlesidedmicrostrip ssar singlesidedannular q quadrant psd positionsensitivedetector la lineararray dsm doublesidedmicrostrip dsar doublesidedannular p pixel ssdmm singlesideddoublemetalmicrostrip
worldwide contacts european direct sales: micronsemiconductorltd 1royalbuildings lancingbusinesspark westsussex bn158un,uk telephone: +44(0)1903755252 fax: +44(0)1903754155 mobile: 07798650588 marketing:colindwilburn direct@micronsemiconductor.co.uk sales: stephendwilburn netsales@micronsemiconductor.co.uk finance: amandagboothby amandaboothby@micronsemiconductor.co.uk production: neilgreenwood production@micronsemiconductor.co.uk r&d: markbullough fab@micronsemiconductor.co.uk design: susannewalsh design@micronsemiconductor.co.uk usa direct sales: micronsemiconductorltd c / o colindwilburn 1881edgewaterdrive mountdora florida32757 usa contact: colindwilburn mandarens1@netzero.com telephone: 3523830195 fax: 3523830195 japanese direct sales: micronsemiconductorltd c / o nikiglassco.ltd. pobox33takanawa tokyo108 japan contact: akinoriyamaguchi ayama@nikiglass.com telephone: 0334564700 fax: 0334563423 korean direct sales: micronsemiconductorltd c / o younginscientificco.ltd youngwhabldg.,547,shinsadong, kangnamgu seoul135890 korea contact: sangyongchung sychung@youngin.com tel:8225197300 fax:8225197400 chinese direct sales: micronsemiconductorltd c / o beijingwahenyidascienceandtechnology developmentco.ltd. rm711712yuquanplaza,yuquanrd, shijingshandst, beijing100049 p.r.c(china) contact: zhilin bjkyunite@vip.sina.com telephone: (0861)88258670 fax: (0861)88258190 www.micronsemiconductor.co.uk

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